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SiC Semiconductors from Global Power Technologies …

2019-4-16 · Global Power Technologies Group SiC Semiconductors for the World. Global Power Technologies Group, Inc. (“GPTG”) is an integrated development and manufacturing company dedied to products based on Silicon Carbide (SiC) technologies and Amorphous Magnetic Materials.

Cree SiC Power Products Overview - NIST

2015-8-27 · MOSFET. Portfolio Beginning in 2011. Dramatic Reduction in System Weight and Complexity compared to Silicon. Switching Frequency (kHz) I_IGBT 0.1 1 2 5 10 20 50 100 200 500 1000 2000 5000 10000 16000 50000 56.796171257790597 56.727120993657664 Cree SiC Power Products Overview Last modified by:

CCS050M12CM2 - WOLFSPEED - MOSFET, SILICON …

The CCS050M12CM2 is a 3-phase silicon Carbide Module with zero turn-off tail current, high frequency operation, enables compact and lightweight system, high efficiency operation. Suitable for Z-FET™ MOSFET and Z-Rec™ diode.

SCT20N120 STMicroelectronics | Discrete …

Order today, ships today. SCT20N120 – N-Channel 1200V 20A (Tc) 175W (Tc) Through Hole HiP247™ from STMicroelectronics. Pricing and Availability on millions of …

Silicon Carbide (SiC) Power Modules | SEMIKRON

Silicon Carbide Power Modules Benefits. SEMIKRON‘s hybrid and full silicon carbide power modules coine the benefits of proven industry standard power modules with SEMIKRON packaging technologies. Thanks to various packaging optimizations, all the benefits that silicon carbide …

Silicon Carbide Power MOSFET | Products & Suppliers

Find Silicon Carbide Power MOSFET related suppliers, manufacturers, products and specifiions on GlobalSpec - a trusted source of Silicon Carbide Power MOSFET information. Supplier: ROHM Semiconductor USA, LLC Features CreeTM Silicon Carbide Power MOSFET CreeTM Silicon Carbide Power Schottky Diode MNPC Topology with Splitted Output

ON Semi NTHL080N120SC1 silicon carbide MOSFET - …

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

C3M0075120K - WOLFSPEED - Silicon Carbide Power …

Silicon Carbide Power MOSFET, N Channel, 30.8 A, 1.2 kV, 0.075 ohm, 15 V, 2.5 V. C3M0075120K Datasheet See all Technical Docs. Product Overview. C3MTM SiC (Silicon Carbide) MOSFET technology Post a question to one of our experts or start a discussion and get responses from supplier experts and fellow engineers in our community. Filter

Silicon Carbide MOSFET operates up to +225°C. - …

2013-3-11 · Silicon Carbide MOSFET operates up to +225°C. Cissoid Mar 11, 2013. Share: A product datasheet is available now from CISSOID’s website (datasheet link). CHT-NEPTUNE can be ordered for sampling and evaluation under the part nuer CHT-PLA8543-TO257-T. Pricing starts at $387.96 for 51 to 200 units. 500,000+ Detailed Supplier Profiles

Silicon Carbide (SiC) | Morgan Technical Ceramics

Both forms of silicon carbide (SiC) are highly wear resistant with good mechanical properties, including high temperature strength and thermal shock resistance. Our engineers are always available to best advise you on the strengths and weaknesses of each ceramic for your particular needs. Typical silicon carbide characteristics include: Low density

C3M0065100K Wolfspeed, A Cree Company Silicon …

2019-4-12 · Silicon Carbide Power MOSFET C3M TM MOSFET Technology. Features. New C3M SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr)

SiC MOSFET provides ultra-fast switching at high …

2017-10-5 · Littelfuse has introduced its first series of silicon carbide (SiC) MOSFETs, the latest addition to the company’s growing power semiconductor line. SiC MOSFET provides ultra-fast switching at high temperatures. “Our new SiC MOSFET series is a critical milestone in our journey to become a leading component supplier in the power

1200V Silicon-Carbide Diodes from …

2017-5-10 · 1200V Silicon-Carbide Diodes from STMicroelectronics Deliver Superior Efficiency and State-of-the-Art Robustness Geneva / 10 May 2017 . A full range of 2A-40A 1200V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes from STMicroelectronics enables a wider range of appliions to benefit from the high switching efficiency, fast recovery, and consistent temperature characteristics of

SCH2080KEC - ROHM - Silicon Carbide Power …

Buy SCH2080KEC - ROHM - Silicon Carbide Power MOSFET, N Channel, 35 A, 1.2 kV, 0.08 ohm, 18 V, 4 V at element14. order SCH2080KEC now! great prices with fast delivery on ROHM products.

UnitedSiC’s 1200 V Silicon Carbide FETs deliver industry’s

2018-5-26 · : > EDA > > UnitedSiC’s 1200 V Silicon Carbide FETs deliver industry’s highest-performance

Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ J D(2, …

Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., T J = 150 °C) in an HiP247™ packageD(2, Datasheet - production data Figure 1: Internal schematic diagram Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (T J = 200 °C) Very fast and robust intrinsic body diode

ON Semi NTHL080N120SC1 silicon carbide MOSFET - …

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

SiC General Information - Silicon Carbide - Littelfuse

Silicon Carbide (SiC) General Information. Silicon Carbide (SiC), also known as carborundum, is a chemical compound composed of silicon and carbon. Occurring naturally as moissanite, a rare mineral, SiC has been mass produced as a synthetic compound for over 100 years.

BEHLKE HV Switches + High Voltage Pulsers in Silicon …

2019-1-26 · BEHLKE. Leading manufacturer of fast HV switches and high speed high-voltage pulsers in solid-state technology. MOSFET, IGBT and Thyristor stacks, liquid cooling

Semiconductor Silicon Carbide | Products & Suppliers

Description: Silicon Carbide is the only chemical compound of carbon and silicon.It was originally produced by a high temperature electro-chemical reaction of sand and carbon. Silicon carbide is an excellent abrasive and has been produced and made into grinding wheels and . Carbides / Carbide Ceramic Type: Silicon Carbide Shape / Form: Fabried / Custom Shape

Silicon carbide CoolSiC™ Schottky diodes

2019-4-1 · by far outperform the corresponding silicon-based ones, and enable efficiency levels unattainable otherwise. Infineon’s portfolio of SiC devices covers 600 V and 650 V to 1200 V Schottky diodes as well as the revolutionary CoolSiC™ MOSFET. Advantages of silicon carbide over silicon …

SiC IGBT High Power Modules datasheet & …

SiC IGBT High Power Modules datasheet, cross reference, 600V igbt dc to dc boost converter SiC IGBT High Power Modules silicon carbide JFET Infineon technology roadmap for mosfet silicon carbide j-fet copper bond wire infineon Electric power steering with IGBT Text: used semiconductors. Served Powerex is a leading supplier of discrete,

SiC MOSFET | Mouser

SiC MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for SiC MOSFET. Datasheet Availability Pricing (USD) Qty. RoHS Technology . Mounting Style . Package / Case . MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package

SCT2750NYTB ROHM, Silicon Carbide Power MOSFET, …

>> SCT2750NYTB from ROHM >> Specifiion: Silicon Carbide Power MOSFET, N Channel, 6 A, 1.7 kV, 0.75 ohm, 18 V, 2.8 V. For your security, you are about to be logged out 60 seconds

SiC 1200 V MOSFET | Mouser

SiC 1200 V MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for SiC 1200 V MOSFET. Datasheet Availability Pricing (USD) Qty. RoHS Technology . Mounting Style . Package / Case . Nuer of Channels . MOSFET N-Ch MOSFET 1200V Silicon Carbide SiC Enlarge

SCT2160KEC ROHM, Silicon Carbide Power MOSFET, …

The SCT2160KEC is a 1200V N-channel Silicon Power MOSFET with fast switching speed and low on resistance. Suitable for solar inverters, DC/DC converters, SMPS, induction heating and motor drives.

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