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boron doped silicon carbide using method

US9287124B2 - Method of etching a boron doped …

In one eodiment, a method is proposed for etching a boron dope hardmask layer. The method includes flowing a process gas comprising at least CH 4 into a processing chaer. Forming a plasma in the process chaer from the process gas and etching the boron doped hardmask layer in the presence of the plasma. In other eodiments, the process gas utilized to etch the boron doped hardmask layer

US8691677B2 - Method for boron doping silicon …

The object of the invention is a process for P-type boron doping of silicon wafers placed on a support in the chaer of a furnace of which one end comprises a wall in which means for introducing reactive gases and a gas carrying a boron precursor in gaseous form are loed, whereby said process comprises the stages that consist in: a) In the chaer, reacting the reactive gases with boron

Method of forming semi-insulating silicon carbide …

2007-10-2 · Eodiments related to a method of forming semi-insulating silicon carbide (SiC) single crystal are disclosed in which shallow donor levels originating, at least in part, from residual nitrogen impurities are compensated by the addition of one or more trivalent element(s) introduced by doping the SiC in a concentration that changes the SiC conductivity from n-type to semi-insulating.

Bare and boron-doped cubic silicon carbide …

2016-4-25 · Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively the method of doped SiC for instance B Cubic SiC NWs in large scale were

(PDF) Superconductivity in heavily boron-doped …

PDF | The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier

Boron Diffusion in Silicon Oxides and Oxynitrides

2013-3-6 · Boron Diffusion in Silicon Oxides and Oxynitrides K. A. Ellis and R. A. Buhrman School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853-2501, USA ABSTRACT A new model is developed for boron diffusion in silicon oxides …

Microstructural Coarsening During Sintering of Boron …

Jie Yin, Zhengren Huang, Xuejian Liu, Zhaoquan Zhang and Dongliang Jiang, Microstructure, mechanical and thermal properties of in situ toughened boron carbide-based ceramic composites co-doped with tungsten carbide and pyrolytic carbon, Journal of the European Ceramic Society, 10.1016/j.jeurceramsoc.2013.01.009, 33, 10, (1647-1654), (2013).

Electrochemical synthesis of ferrate using boron doped

2013-2-28 · Electrochemical synthesis of ferrate using boron doped diamond anodes___ 53| Electrochemical synthesis of ferrate using

Solid Solubility of Aluminum and Boron in Silicon …

Solid solubility of aluminum in silicon carbide was studied by the powder X‐ray diffraction technique (Debye‐Scherrer method). At 2200° C the solubility limit was 1.0 wt%. Measurements of the lattice parameter of Al‐saturated samples as a function of temperature gave a heat of solution of 147 kJ/mol.

Synthesis and Electrochemical Property of Boron …

2018-8-31 · Mesoporous carbon with homogeneous boron dopant was prepared by co-impregnation and carbonization of sucrose and boric acid confined in mesopores of SBA-15 silica template. Low-level boron doping shows alytic effect on oxygen chemisorption at edge planes and alters electronic structure of space charge layer of doped mesoporous carbon. These characteristics are responsible for substantial

Effect of boron and silicon doping on improving the cutting

2015-10-13 · history:The boron-doped (B-doped) and silicon-doped (Si-doped) diamond films are deposited on Co-cemented tung- Received 18 Deceer 2012 stencarbide(WC–Co |

Etching and passivation effects on boron-doped …

2019-3-19 · Etching and passivation effects of hydrogen treatment of boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) film used as a p layer of p-i-n type amorphous silicon based solar cells using a mercury-sensitized photochemical vapor deposition method were investigated. For the hydrogen treatment of the p-layer film, longer p-layer deposition time was needed to obtain the same …

Etching and passivation effects on boron-doped …

2019-3-7 · Etching and passivation effects on boron-doped amorphous silicon carbide player of amorphous silicon solar cell by hydrogen treatment using a mercury-sensitized photochemical vapor deposition method Jae Hoon Janga) and Koeng Su Lim Department of Electrical Engineering, Korea Advanced Institute of Science and Technology,

ERURQ GRSHGVLOLFRQ FDUELGH - Institute of Physics

system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

Method of forming semi-insulating silicon carbide …

2006-8-10 · Eodiments related to a method of forming semi-insulating silicon carbide (SiC) single crystal are disclosed in which shallow donor levels originating, at least in part, from residual nitrogen impurities are compensated by the addition of one or more trivalent element(s) introduced by doping the SiC in a concentration that changes the SiC conductivity from n-type to semi-insulating.

Bare and boron-doped cubic silicon carbide …

2017-1-25 · Fabriion of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure.

Nitric+acid+pretreatment+for+the+passivation+of+boron

2011-5-26 · APPLIED PHYSICS LETTERS 92, 063510 2008 Nitric acid pretreatment for the passivation of boron emitters for n-type base silicon solar cells Valentin D

Silicon carbide - Wikipedia

2019-4-18 · Silicon carbide is an important material in TRISO-coated fuel particles, the type of nuclear fuel found in high temperature gas cooled reactors such as the Pebble Bed Reactor. A layer of silicon carbide gives coated fuel particles structural support and …

Silicon carbide - Wikipedia

2019-4-18 · Silicon carbide is an important material in TRISO-coated fuel particles, the type of nuclear fuel found in high temperature gas cooled reactors such as the Pebble Bed Reactor. A layer of silicon carbide gives coated fuel particles structural support and …

(PDF) Superconductivity in heavily boron-doped …

PDF | The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier

CN102637581A - Method for preventing outgassing of boron

2012-4-6 · The invention relates to the field of manufacturing of semiconductors and particularly relates to a method for preventing outgassing of a boron doped layer.

Doping (semiconductor) - Wikipedia

2019-4-20 · Lithium is used for doping silicon for radiation hardened solar cells. The lithium presence anneals defects in the lattice produced by protons and neutrons. Lithium can be introduced to boron-doped p+ silicon, in amounts low enough to maintain the p character of the material, or in large enough amount to counterdope it to low-resistivity n type.

Chemical etching of silicon (100) by hydrogen (Journal

2019-4-15 · This paper describes a method for preparation of thin specimens for study with an electron-diffraction camera and electron microscope by chemical etching and chemical polishing with the specimen loed on a water surface. The method is tested with boron-doped silicon crystals to whose planar side is applied a layer of molybdenum 0.1 mm thick.

Solid Solubility of Aluminum and Boron in Silicon …

Solid solubility of aluminum in silicon carbide was studied by the powder X‐ray diffraction technique (Debye‐Scherrer method). At 2200° C the solubility limit was 1.0 wt%. Measurements of the lattice parameter of Al‐saturated samples as a function of temperature gave a heat of solution of 147 kJ/mol.

N-Type Boron-Carbide Semiconductor Polytype and …

2018-11-11 · A non-doped n-type boron carbide semiconductor polytype and a method of fabriing the same is provided. The n-type boron carbide polytype may be used in a device for detecting neutrons, electric power conversion, and pulse counting. Such a device may include an n-type boron carbide layer

Cubic silicon carbide as a potential photovoltaic material

2017-5-10 · In the latter case the boron doped polycrystalline source materials were fabried using a PVT bulk method with a mixture of boron carbide powder and SiC carbide powder. Wafers were prepared from the boules and used as boron doped source material for the homoepitaxial growth of 3C-SiC layers on the previously

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